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A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

by admin on March 5th, 2010

D. Fleury, A. Cros, G. Bidal, J. Rosa and G. Ghibaudo
IEEE Electron Device Letters, vol.30, no. 9, Spet. 2009 (ISI Impact Factor: 3.049)

ABSTRACT
This letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, Rsd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-κ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis.

[Full paper] (full-text article)

This paper appears in: Electron Device Letters, IEEE
Volume: 30 Issue:9
On page(s): 975 - 977
ISSN: 0741-3106
INSPEC Accession Number: 10841640
Digital Object Identifier: 10.1109/LED.2009.2026592
First Published: 31 juillet 2009
Current Version Published: 25 août 2009
Sponsored by: IEEE Electron Devices Society

Copyright © 2009 IEEE. This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to preprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org

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