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New experimental insight into ballisticity of transport in strained bulk MOSFETs (VLSI Symposium 2009)

by admin on March 5th, 2010

Abstract

This paper proposes a new expression unifying all transport mechanisms (drift-diffusion, velocity-saturation and quasi-ballistic). This enables an experimental extraction of the limiting velocity and also, for the first time, a determination of its nature (thermal injection or velocity saturation). We show that the observed increase in the limiting velocity in short and strained devices was confusingly interpreted as an evidence of increasing ballisticity. At least down to 20 nm channel length, the transport remains velocity-saturation limited. However, the good news we confirm experimentally is that Vsat increases itself in short and strained devices. This promises an increase in Ion, even if the nature of the transport is velocity-saturated. This new findings open doors for the study and optimization of transport in advanced CMOS technologies.

[Full paper] (full-text article)

[Presentation material] (presentation material)

Publication Date: 16-18 June 2009
On page(s):
16 - 17
Location:
Kyoto
Print ISBN:
978-1-4244-3308-7
INSPEC Accession Number:
10826221
Current Version Published:
11 août 2009

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